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| SMD Type N-Channel Junction Silicon FET 2SK303 Junction FET Features Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm impedance conversion. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 +0.1 0.38-0.1 0-0.1 1Source 2 Drain 2.Emitter 2. Source 1.Base 1. Gate 3 Gate 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to Drain voltage Gate current Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGDS IG ID PD Tch Tstg Rating 30 -30 10 20 200 150 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Gate to drain Gate to source leakage current Drain cut-off current Cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Reverse transfer capacitance Symbol VGDS IGSS IDSS VGS(off) Yfs RDS(on) Ciss Crss IG=-10 A Testconditons Min -30 -1.0 0.6 -1 2.5 6.0 250 5 1.5 pF pF 12.0 -4 Typ Max Unit V nA mA V ms VGS=-20V VDS=10V,VGS=0 VDS=10V,ID=1 A VDS=10V,VGS=0,f=1MHz VGS=0,VDS=10mV VDS=10V,VGS=0,f=1MHZ IDSS Classification unit:mA V2 2 0.6 1.5 V3 3 1.2 3.0 V4 4 2.5 6.0 V5 5 5.0 12.0 Marking Rank IDSS www.kexin.com.cn 1 |
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